0
Wireless

First GaN envelope-tracking power amplifier gets launched

Friday 19 May 2017 | 12:10 CET | News

Mitsubishi Electric, Nokia Bell Labs and the Center for Wireless Communications at UC San Diego announced their joint development of what they call the world’s first ultra-fast gallium nitride (GaN) envelope-tracking power amplifier, which supports modulation bandwidth up to 80MHz and is expected to reduce energy consumption in wireless base stations. Technical details will be presented during the IEEE MTT International Microwave Symposium (IMS) 2017, which will be held in Honolulu, Hawaii, USA from 4 to 9 June.

The newly developed ultra-fast GaN envelope-tracking power amplifier achieves performance thanks in part to Mitsubishi Electric’s high-frequency GaN transistor technology and design innovation for the GaN supply-modulator circuit. Using Nokia Bell Labs’ real-time digital pre-distortion (DPD) system, the power amplifier has demonstrated efficient operation even with 80MHz modulated LTE signals, the world’s widest modulation bandwidth for this purpose as of 19 May.



Free Headlines in your E-mail

Every day we send out a free e-mail with the most important headlines of the last 24 hours.

Subscribe now

Categories: Mobile & Wireless
Companies: IEEE / Mitsubishi Electric / MTT / Nokia
Countries: World
::: add a comment
This article is part of dossier

LTE


Add comment

We welcome comments that add value to the discussion. We attempt to block comments that use offensive language or appear to be spam, and our editors frequently review the comments to ensure they are appropriate. If you see a comment that you believe is inappropriate to the discussion, you can bring it to our attention by using the report abuse links. As the comments are written and submitted by visitors of the Telecompaper website, they in no way represent the opinion of Telecompaper.


Related

NXP to showcase new ICs, GaN transistors at tech event

Published 26 May 2016 11:58 CET | United States
NXP Semiconductors will showcase eight new amplifier Integrated Circuits (ICs) and four new Gallium Nitride (GaN) transistors at ...

Macom sues Infineon over GaN technology

Published 27 Apr 2016 10:47 CET | United States
Macom Technology Solutions, a supplier of semiconductor products, announced that it has initiated legal action against Infineon ...

Freescale introduces first GaN transistor for base stations

Published 20 May 2015 08:52 CET | World
Freescale Semiconductor introduced its first gallium nitride (GaN) RF power transistor for cellular base stations. The new ...

RFMD introduces new GaN amplifiers for Docsis 3.1

Published 23 Sep 2014 15:27 CET | World
Global manufacturer of radio frequency systems RFMD has introduced eleven new amplifiers of which six are gallium nitride- (GaN-) ...

Northrop Grumman intros GaN amplifiers for Ka-band terminals

Published 04 Jun 2014 07:35 CET | World
Northrop Grumman has introduced two high power gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power ...