First GaN envelope-tracking power amplifier gets launched

Friday 19 May 2017 | 12:10 CET | News
Mitsubishi Electric, Nokia Bell Labs and the Center for Wireless Communications at UC San Diego announced their joint development of what they call the world's first ultra-fast gallium nitride (GaN) envelope-tracking power amplifier, which supports modulation bandwidth up to 80MHz and is expected to reduce energy consumption in wireless base stations. Technical details will be presented during the IEEE MTT International Microwave Symposium (IMS) 2017, which will be held in Honolulu, Hawaii, USA from 4 to 9 June.

Thank you for visiting Telecompaper

We hope you've enjoyed your free articles. Sign up below to get access to the rest of this article and all the telecom news you need.

  • Register free and gain access to even more articles from Telecompaper. Register here
  • Subscribe and get unlimited access to Telecompaper’s full coverage, with a customised choice of news, commentary, research and alerts.


Already registered?

Free Headlines in your E-mail

Every day we send out a free e-mail with the most important headlines of the last 24 hours.

Subscribe now

Categories: Mobile & Wireless
Companies: IEEE / Mitsubishi Electric / MTT / Nokia
Countries: World
::: add a comment
This article is part of dossier


Add comment

We welcome comments that add value to the discussion. We attempt to block comments that use offensive language or appear to be spam, and our editors frequently review the comments to ensure they are appropriate. If you see a comment that you believe is inappropriate to the discussion, you can bring it to our attention by using the report abuse links. As the comments are written and submitted by visitors of the Telecompaper website, they in no way represent the opinion of Telecompaper.


NXP to showcase new ICs, GaN transistors at tech event

Published 26 May 2016 11:58 CET | United States
NXP Semiconductors will showcase eight new amplifier Integrated Circuits (ICs) and four new Gallium Nitride (GaN) transistors at ...

Macom sues Infineon over GaN technology

Published 27 Apr 2016 10:47 CET | United States
Macom Technology Solutions, a supplier of semiconductor products, announced that it has initiated legal action against Infineon ...

Freescale introduces first GaN transistor for base stations

Published 20 May 2015 08:52 CET | World
Freescale Semiconductor introduced its first gallium nitride (GaN) RF power transistor for cellular base stations. The new ...

RFMD introduces new GaN amplifiers for Docsis 3.1

Published 23 Sep 2014 15:27 CET | World
Global manufacturer of radio frequency systems RFMD has introduced eleven new amplifiers of which six are gallium nitride- (GaN-) ...

Northrop Grumman intros GaN amplifiers for Ka-band terminals

Published 04 Jun 2014 07:35 CET | World
Northrop Grumman has introduced two high power gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power ...

Calendar   /   Industry Events

17 Oct SCTE Cable-Tec Expo
20 Oct Ericsson Q3 2017
22 Oct RIPE 75
23 Oct Orange Belgium Q3 2017
23 Oct Logitech fiscal Q2
23 Oct Telecoms Energy Efficiency Forum
23 Oct ETSI IoT Week
23 Oct Intelligent Cities Exhibition & Conference
24 Oct Telekom Austria Q3 2017
24 Oct AT&T Q3 2017
24 Oct Corning Q3 2017
24 Oct Akamai Technologies Q3 2017
24 Oct America Movil Q3 2017
24 Oct Juniper Networks Q3 2017
24 Oct Millicom Q3 2017
24 Oct Megacable Q3 2017
24 Oct Texas Instruments Q3 2017
24 Oct FCC meeting
24 Oct Capacity Europe
24 Oct Telco Data Analytics Europe
24 Oct Broadband World Forum
24 Oct Customer Expo 2017
25 Oct Mellanox Q3 2017
25 Oct Telefonica Brasil Q3 2017
25 Oct Digital Realty Q3 2017
25 Oct Telenor Q3 2017
25 Oct NXP Semiconductors Q3 2017
25 Oct Norway telecom statistics H1 2017
25 Oct European Smart Homes
25 Oct Communic Indonesia
::: More Calendar Items