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IT

Samsung completes 5nm EUV development

Wednesday 17 April 2019 | 10:29 CET | News

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Samsung Electronics announced that its 5-nanometer (nm) FinFET process technology is complete in its development and is now ready for customer samples. Compared to 7nm, Samsung's 5nm FinFET process technology provides up to a 25 percent increase in logic area efficiency with 20 percent lower power consumption or 10 percent higher performance as a result of process improvement to enable us to have more innovative standard cell architecture.

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Categories: IT
Companies: Samsung
Countries: World
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