
The company said it’s now planning to expand the production of its fifth-generation 512Gb V-NAND at its Pyeongtaek plant in Korea throughout the first half of 2019 to fully address the anticipated strong demand for the 1TB eUFS from mobile device manufacturers around the world. It made no mention as to whether the new memory will be included in the upcoming Galaxy S10, to be unveiled on 20 February, which is rumoured to come in at least three variants, with the highest-end model possibly featuring 1TB of storage and 12GB of RAM.