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Wireless

Globalfoundries partners Raytheon to develop 5G wireless chips

Thursday 20 May 2021 | 10:08 CET | News
Raytheon Technologies and Globalfoundries will collaborate to make and commercialise a new gallium nitride on silicon (GaN-on-Si) semiconductor that will enable improved radio frequency performance for 5G and 6G mobile and wireless infrastructure applications. Under the agreement, Raytheon Technologies will license its proprietary gallium nitride on silicon technology and technical expertise to GF, which will develop the new semiconductor at its Fab 9 facility in Burlington, Vermont.

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Categories: Mobile & Wireless
Companies: GlobalFoundries / Raytheon Technologies
Countries: World
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