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NXP advances 5G with new Gallium Nitride fab in Arizona

Wednesday 30 September 2020 | 08:33 CET | News
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NXP Semiconductors announced the grand opening of its 150 mm (6-inch) RF Gallium Nitride (GaN) fab in Chandler, Arizona, the most advanced fab dedicated to 5G RF power amplifiers in the US. The new internal factory combines NXP's expertise in RF power and its high-volume manufacturing know-how, resulting in streamlined innovation that supports the expansion of 5G base stations and advanced communication infrastructure in the industrial, aerospace and defense markets.

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Categories: Mobile & Wireless
Companies: NXP Semiconductors
Countries: United States
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