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NXP integrates GaN technology in RF chips, boosting 5G power efficiency

Tuesday 29 June 2021 | 11:10 CET | News
NXP Semiconductors announced the integration of Gallium Nitride (GaN) technology to its multi-chip module platform. Building on the company's investment in its GaN fab in Arizona, NXP plans to start sampling the new RF products for 5G massive MIMO in Q3 and begin production later this year. 

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Categories: Mobile & Wireless
Companies: NXP Semiconductors
Countries: World
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