Samsung announced in October the start of mass production using 10nm FinFET. Compared to its 14nm FinFET predecessors, Samsung’s 10nm technology allows up to a 30 percent increase in area efficiency with 27 percent higher performance or up to 40 percent lower power consumption. Using 10nm FinFET, the Snapdragon 835 processor will offer a smaller chip footprint, giving OEMs more usable space inside smartphones to support larger batteries or slimmer designs, Qualcomm said. Process improvements, combined with a more advanced chip design, are expected to bring significant improvements in battery life.
The Snapdragon 835 is in production now and expected to ship in commercial devices in the first half of 2017. The 835 is the successor to the Snapdragon 820/21 processor, which has over 200 designs in development.
